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  d0512 tkim tc-00002842/70710qb tkim tc-00002398 no. a1796-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 bfl4004 n-channel power mosfet 800v, 6.5a, 2.5 , to-220f-3fs stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-resistance r ds (on)=1.9 (typ.) ? 10v drive ? input capacitance ciss=710pf (typ.) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 800 v gate-to-source voltage v gss 30 v drain current (dc) i dc *1 limited only by maximum temperature tch=150 c 6.5 a i dpack *2 tc=25 c (our ideal heat dissipation condition)*3 4.3 a drain current (pulse) i dp pw 10 s, duty cycle 1% 13 a allowable power dissipation p d 2.0 w tc=25 c (our ideal heat dissipation condition)*3 36 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *4 e as 225 mj avalanche current *5 i av 6.5 a note : * 1 shows chip capability * 2 package limited * 3 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. * 4 v dd =50v, l=10mh, i av =6.5a (fig.1) * 5 l 10mh, single pulse package dimensions unit : mm (typ) 7528-001 ordering number : ena1796a product & package information ? package : to-220f-3fs ? jeita, jedec : sc-67 ? minimum packing quantity : 50 pcs./tube marking electrical connection 1 : gate 2 : drain 3 : source to-220f-3fs 10.16 0.8 15.87 12.98 3.3 6.68 3.23 1.47 max 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 fl4004 lot no. 1 3 2 BFL4004-1E
bfl4004 no. a1796-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 800 v zero-gate voltage drain current i dss v ds = 640 v, v gs =0v 1.0 m a gate-to-source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 2.0 4.0 v forward transfer admittance | yfs | v ds =20v, i d = 3.25 a 1.7 3.4 s static drain-to-source on-state resistance r ds (on) i d = 3.25 a, v gs =10v 1.9 2.5 input capacitance ciss v ds =30v, f=1mhz 710 pf output capacitance coss 120 pf reverse transfer capacitance crss 42 pf turn-on delay time t d (on) see fig.2 17 ns rise time t r 44 ns turn-off delay time t d (off) 130 ns fall time t f 44 ns total gate charge qg v ds =200v, v gs =10v, i d =6.5a 36 nc gate-to-source charge qgs 6.2 nc gate-to-drain ?miller? charge qgd 18 nc diode forward voltage v sd i s =6.5a, v gs =0v 0.85 1.2 v reverse recovery time t rr see fig.3 i s =6.5a, v gs =0v, di/dt=100a/ s 970 ns reverse recovery charge q rr 6700 nc fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit ordering information device package shipping memo BFL4004-1E to-220f-3fs 50pcs./tube pb free 50 50 rg v dd l 10v 0v bfl4004 g s d p. g 50 g s d i d =3.25a r l =59 v dd =200v v out bfl4004 v in pw 10 s d.c. 1% 10v 0v v in v dd =50v bfl4004 500 h driver mosfet g s d
bfl4004 no. a1796-3/7 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- tc r ds (on) -- v gs i s -- v sd | y fs | -- i d forward transfer admittance, | y fs | -- s drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it15749 it15750 it15751 it15752 --50 --25 0 25 50 75 100 125 150 0 0 12 10 6 8 10 50 535 25 45 20 30 40 15 4 2 0 12 10 6 8 4 2 012 4 210 68 15v 10v 0 7 6 5 4 3 2 1 tc=25 c v ds =20v v gs =4v it15754 0.2 0.4 0.6 0.8 1.2 1.0 0.01 0.1 10 7 5 3 2 3 2 7 5 3 2 2 1.0 7 5 3 it15753 25 c --25 c tc=75 c 0.01 0.1 23 57 23 57 7 1.0 10 23 5 1.0 0.1 2 5 7 5 7 3 2 5 3 7 v ds =20v tc= --25 c 75 c v gs =0v single pulse tc= --25 c 25 c 75 c 234 0 6 5 4 3 2 1 15 12 8 610 514 13 9 711 i d =3.25a single pulse tc=75 c 25 c --25 c v gs =10v, i d =3.25a 5v 25 c 7v 6v single pulse it15755 10 100 3 2 2 5 7 7 3 7 5 0.1 1.0 10 23 57 23 2 57 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 5 3 2 50 10 53040 20 15 35 45 25 it15756 f=1mhz ciss coss crss
bfl4004 no. a1796-4/7 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c it10478 it15759 it15760 it15758 it15757 0 0 1 2 3 4 5 6 7 8 40 10 9 15 30 10 52035 25 v ds =200v i d =6.5a 0 0 20 40 60 80 100 120 2.5 140 160 p d -- ta allowable power dissipation, p d -- w 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 140 120 5 10 25 36 20 40 35 30 15 160 p d -- tc 0.01 0.1 2 3 5 7 2 1.0 3 5 7 2 a s o 0.1 10 s 100ms 1 0ms 1ms dc operation 1.0 10 100 1000 23 57 23 57 7 23 5 2 2 357 10 3 5 7 3 2 operation in this area is limited by r ds (on). i dp =13a(pw 10 s) i dc ( * 1)=6.5a i dpack ( * 2)=4.3a 100 s drain-to-source voltage, v ds -- v drain current, i d -- a tc=25 c single pulse * 1. shows chip capability * 2. our ideal heat dissipation condition ambient temperature, ta -- c case temperature, tc -- c allowable power dissipation, p d -- w
bfl4004 no. a1796-5/7 magazine speci cation BFL4004-1E
bfl4004 no. a1796-6/7 outline drawing BFL4004-1E mass (g) unit 1.8 * for reference mm
bfl4004 ps no. a1796-7/7 note on usage : since the bfl4004 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.


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